CHE1270A98F rohs compliant ref. : dsch1270a2074 - 14 mar 12 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 5-44ghz detector gaas monolithic microwave ic description the che1270a is a detector that integrates a matched detection diode (vdet). a reference diode is also available to be used in differential mode (vref). it is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. the circuit is manufactured with a schottky diode mmic process, 1m gate length, via holes through the substrate and air bridges. it is available in chip form. main features transmitted power detection (mv) wide frequency range 5-44ghz 30db dynamic range esd protected bcb layer protection chip size: 1.34 x 0.82 x 0.1mm main characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 5 44 ghz dr dynamic range 30 db rl return loss -10 db vdet rf in vref matching dc vdet rf in vref matching dc 1 10 100 1000 10000 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 input power (dbm) vdetect= vref-vdet (mv) 10ghz 11ghz 12ghz 17ghz 22ghz 27ghz 32ghz 37ghz 40ghz 42ghz 44ghz
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 2/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 main characteristics tamb.= +25c, vdc = +4.5v symbol parameter min typ max unit freq frequency range 5 44 ghz dr dynamic range (for input power detection) 30 d b ipd input power detection -15 15 dbm vdetect voltage detection vref C vdet from ipd_min to ipd_max 5 2200 mv rl return loss (5 C 10ghz) return loss (10 C 12ghz) return loss (12 C 14.5ghz) return loss (14.5 C 42ghz) return loss (42 C 44ghz) -4 -7 -8 -10 -7 -3 -5 -6 -8 -5 db db db db db vdc bias voltage 4.5 v idc bias current 50 70 90 a these values are representative of on-wafer measure ments that are made without bonding wires at the rf ports but with 27k ? resistor in parallel on pads vdet and vref.
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 3/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vdc drain bias voltage 6v v ipdmax maximum input power detection +18 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +150 c (1) operation of this device above anyone of these par ameters may cause permanent damage.
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 4/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.= +25c, vdc = +4.5v return loss versus frequency transmitted power detection -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 freq (ghz) return loss (db) 1 10 100 1000 10000 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 input power (dbm) vdetect= vref-vdet (mv) 12 ghz 17ghz 22ghz 27ghz 32ghz 37ghz 40ghz 42ghz 44ghz
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 5/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.= +25c, vdc = +4.5v transmitted power detection versus frequency @ -15d bm input power transmitted power detection versus frequency @ +15d bm input power 0 5 10 15 20 25 30 35 40 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 freq (ghz) vdetect= vref-vdet (mv) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 freq (ghz) vdetect= vref-vdet (mv)
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 6/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 100m chip size: 1.34 x 0.82 x 0.1mm dc pads size: 100/100 m all dimensions are in micrometers note: supply feed might be capacitively bypassed. 2 5m diameter gold wire is to be prefered.
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 7/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes recommended external resistors assembly 27k ? resistors in parallel with vdet and vref pads are recommended to provide the best behaviour in the whole operating temperature range. as the voltage detection is the difference between vref and vdet, the external resistor value should be identical on these two ports. for information, a variation of 3% leads around 1mv variation of detected voltage. due to esd protection circuits on rf input, an exte rnal capacitance might be requested to isolate the product from external voltage that coul d be present on the rf access. esd protections are also implemented on vdet and vr ef accesses. due to the bcb coating on the chip, qualification d omain implies the chip must be glued. vdet rf in vref matching dc 27k w ww w 27k w ww w vdet rf in vref matching dc 27k w ww w 27k w ww w
5-44ghz detector CHE1270A98F ref. : dsch1270a2074 - 14 mar 12 8/8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. recommended environmental management ums products are compliant with the regulation in p articular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums-gaas.com . ordering information chip form: CHE1270A98F/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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